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2SD580
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2SD580

SKU: 2SD580
2SD580 Transistor Silicon NPN CASE: TO8 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO8
Manufacturer Fujitsu
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 20
Min hFE 70-
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
R(sat) (Û) 2.0
Derate Above 25°C 133m
Trans. Freq (Hz) Min. 1.2
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 540223
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