| 2SD581 Datasheet |
| Equivalent | 2SD581A | |
| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 150 | |
| Vbr CEO | 100 | |
| Max. PD (W) | 60 | |
| Max. hFE | 200 | |
| Min hFE | 60 | |
| Ic Max. (A) | 7.0 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | NPN | |
| R(sat) (Û) | 300m | |
| Derate Above 25°C | 480m | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 60 W | |
| Maximum Collector-Base Voltage |Vcb| | 150 V | |
| Maximum Collector-Emitter Voltage |Vce| | 100 V | |
| Maximum Emitter-Base Voltage |Veb| | 6 V | |
| Maximum Collector Current |Ic max| | 7 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SKU | 346077 | |