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2SD581A
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2SD581A

SKU: 2SD581A
2SD581A Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Price:
£16.79 Inc. VAT (£13.99 Ex. VAT)
£16.79 Inc. VAT (£13.99 Ex. VAT)
Qty
Datasheet
2SD581A Datasheet
Product specifications
Equivalent 2SD581
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CBO 150
Vbr CEO 120
Max. PD (W) 60
Max. hFE 200
Min hFE 60
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 300m
Derate Above 25°C 480m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 346078
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