The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD604
View detailed images (13)

2SD604

SKU: 2SD604
2SD604 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 180
Max. PD (W) 100
Max. hFE 3.2k
Min hFE 400
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
R(sat) (Û) 1.0
Derate Above 25°C 800m
Trans. Freq (Hz) Min. 8.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 180 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 542513
Back