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2SD632
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2SD632

SKU: 2SD632
2SD632 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 350
Vbr CEO 300
Max. PD (W) 80
Max. hFE 250
Min hFE 50
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 1.5
Derate Above 25°C 640m
Oper. Temp (°C) Max. 140
@VCE (V) 15
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 549837
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