2SD658H

SKU: 2SD658H

2SD658H Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Equivalent	2SD658
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CBO	1.5k
Vbr CEO	600
Max. PD (W)	50
Max. hFE	60
Min hFE	6.0
Ic Max. (A)	5.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	7.0u
R(sat) (Û)	1.2
Derate Above 25°C	40m
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Collector-Emitter Voltage \|Vce\|	600 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	6
SKU	590790

Back