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2SD665
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2SD665

SKU: 2SD665
2SD665 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Price:
£23.99 Inc. VAT (£19.99 Ex. VAT)
£23.99 Inc. VAT (£19.99 Ex. VAT)
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Datasheet
2SD665 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 150
Max. hFE 140
Min hFE 40
Ic Max. (A) 15
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 1.2
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 82271
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