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2SD684A
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2SD684A

SKU: 2SD684A
2SD684A Transistor Silicon NPN CASE: TO66 MAKE: Toshiba
Product specifications
Equivalent 2SD684
Type Transistor Silicon NPN
Case TO66
Manufacturer Toshiba
Vbr CEO 400
Max. PD (W) 30
t(f) Max. (S) 5.0u
Min hFE 600
Ic Max. (A) 6.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 500u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 1.0u
R(sat) (Û) 500m
t(stor) Max. (S) 8.0u
Derate Above 25°C 240m
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-38
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 35 pF
Forward Current Transfer Ratio (hFE), MIN 600
SKU 585451
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