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2SD685
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2SD685

SKU: 2SD685
2SD685 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CEO 400
Max. PD (W) 100
t(f) Max. (S) 5.0u
Min hFE 400
Ic Max. (A) 10
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 500u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 1.0u
R(sat) (Û) 250m
t(stor) Max. (S) 12u
Derate Above 25°C 800m
@VCE (test) 2.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-38
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 90 pF
Forward Current Transfer Ratio (hFE), MIN 400
SKU 395655
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