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2SD760
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2SD760

SKU: 2SD760
2SD760 Transistor Silicon NPN CASE: TO220 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Hitachi
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 25
Min hFE 35
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 2.0
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 180 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 115448
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