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2SD777
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2SD777

SKU: 2SD777
2SD777 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Datasheet
2SD777 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 65
Vbr CEO 65
Max. PD (W) 100
Max. hFE 2.5k
Min hFE 500
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Polarity NPN
Derate Above 25°C 860m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 55 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 500
SKU 346121
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