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2SD806
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2SD806

SKU: 2SD806
2SD806 Transistor Silicon NPN CASE: TO3A-1 MAKE: Fuji Electric
Datasheet
2SD806 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3A-1
Manufacturer Fuji Electric
Vbr CBO 650
Vbr CEO 650
Ckts Per Dev. 1
Max. PD (W) 400
t(f) Max. (S) 4.0u
Min hFE 100
Ic Max. (A) 50
@Ic (test) (A) 50
Polarity NPN
Tr Max. (s) 3.0u
Pinout Equivalence Number N/A
Maximum Collector Power Dissipation (Pc) 400 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 346127
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