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2SD812
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2SD812

SKU: 2SD812
2SD812 Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics
Datasheet
2SD812 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT78
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 40
Max. hFE 200
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Trans. Freq (Hz) Min. 7.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 55 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 346128
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