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2SD826E
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2SD826E

SKU: 2SD826E
2SD826E Transistor Silicon NPN CASE: SOT32 MAKE: Sanyo Semiconductor
Product specifications
Type Transistor Silicon NPN
Case SOT32
Manufacturer Sanyo Semiconductor
Vbr CBO 60
Vbr CEO 20
Max. PD (W) 10
t(f) Max. (S) 340n+
Max. hFE 200
Min hFE 120
Ic Max. (A) 5.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 30n
Derate Above 25°C 71m
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 45 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 571838
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