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2SD835
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2SD835

SKU: 2SD835
2SD835 Transistor Silicon NPN CASE: SOT78 MAKE: Fuji Electric
Datasheet
2SD835 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT78
Manufacturer Fuji Electric
Vbr CEO 500
Max. PD (W) 60
t(on) Delay (S) 3.0u
t(f) Max. (S) 10u
Min hFE 400
Ic Max. (A) 6.0
@Ic (test) (A) 4.0
Mat. Silicon Logic
Polarity NPN
t(stor) Max. (S) 15u
@VCE (test) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 400
SKU 346135
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