2SD855A

SKU: 2SD855A

2SD855A Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Equivalent	2SD855
Type	Transistor Silicon NPN
Case	SOT78
Manufacturer	Matsushita Electronics
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	30
Max. hFE	450
Min hFE	40
Ic Max. (A)	1.0
@Ic (test) (A)	0.2
Icbo Max. @Vcb Max. (A)	300u
Polarity	NPN
Tr Max. (s)	1.2u
Derate Above 25°C	240m
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	550836

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