2SD855B

SKU: 2SD855B

2SD855B Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Equivalent	2SD855
Type	Transistor Silicon NPN
Case	SOT78
Manufacturer	Matsushita Electronics
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	30
Max. hFE	450
Min hFE	40
Ic Max. (A)	1.0
@Ic (test) (A)	0.2
Icbo Max. @Vcb Max. (A)	300u
Polarity	NPN
Tr Max. (s)	1.2u
Derate Above 25°C	240m
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	550837

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