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2SD867
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2SD867

SKU: 2SD867
2SD867 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Datasheet
2SD867 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 130
Vbr CEO 110
Max. PD (W) 100
Max. hFE 200
Min hFE 50
Ic Max. (A) 10
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector-Emitter Voltage |Vce| 110 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 200 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 115457
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