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2SD888
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2SD888

SKU: 2SD888
2SD888 Transistor Silicon NPN CASE: SOT78 MAKE: Matsushita Electronics
Datasheet
2SD888 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT78
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 50
Max. hFE 2.0k
Min hFE 500
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 2.1u
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 346148
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