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2SD899
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2SD899

SKU: 2SD899
2SD899 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Product specifications
Equivalent 2SD899A
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CEO 1.5k
Max. PD (W) 50
t(f) Max. (S) 1.0u
Min hFE 11-
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Derate Above 25°C 400m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 11
SKU 542533
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