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2SD950
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2SD950

SKU: 2SD950
2SD950 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Datasheet
2SD950 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 1.5k
Max. PD (W) 42
Max. hFE 8.0
Min hFE 2.0
Ic Max. (A) 3.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Tr Max. (s) 11u
Derate Above 25°C 336m
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 42 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 4
SKU 116095
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