ACY23VI

SKU: ACY23VI

ACY23VI Transistor Germanium PNP CASE: TO1 MAKE: Siemens Semiconductors

Product specifications

Weight	0.01 kg
Equivalent	ACY23V
Type	Transistor Germanium PNP
Case	TO1
Manufacturer	Siemens Semiconductors
Vbr CBO	32
Vbr CEO	30
Max. PD (W)	300m
C(ob) (F)	27p
Derate (Amb) (W/°C)	3.3m
hfe	150=
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	18u
Polarity	PNP
Trans. Freq (Hz) Min.	1.5M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	100
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.9 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	16 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	80 °C
Collector Capacitance (Cc)	90 pF
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	75
SKU	577624

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