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AT200
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AT200

SKU: AT200
AT200 Transistor Germanium PNP CASE: TO3 MAKE: ATES
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer ATES
Vbr CBO 320
Max. PD (W) 5.0
Ic Max. (A) 10
Icbo Max. @Vcb Max. (A) 200u
Polarity PNP
Derate Above 25°C 166m
Oper. Temp (°C) Max. 100
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 320 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 533708
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