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BCV29
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BCV29

SKU: BCV29
BCV29 Transistor Silicon NPN Darlington CASE: SOT89 MAKE: Philips
Datasheet
BCV29 Datasheet
Product specifications
Type Transistor Silicon NPN Darlington
Case SOT89
Manufacturer Philips
Vbr CEO 30
Max. PD (W) 1.0
Min hFE 4.0k
Ic Max. (A) 500m
@Ic (test) (A) 100u
Icbo Max. @Vcb Max. (A) 100n
Mat. Silicon Logic
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) 1.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 20000
SMD Transistor Code ED_EF
SKU 740301
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