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BCW29
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BCW29

SKU: BCW29
BCW29 Transistor Silicon PNP CASE: SOT23 MAKE: NXP Semiconductors
Datasheet
BCW29 Datasheet
Product specifications
Equivalent BCW29-SMD
Type Transistor Silicon PNP
Case SOT23
Manufacturer NXP Semiconductors
Vbr CBO 32
Vbr CEO 32
Max. PD (W) 350m
C(ob) (F) 4.5p
Derate (Amb) (W/°C) 1.8m
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M-
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code C1_C1p_C1t_C1W_GC1
SKU 20059
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