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BCW30R
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BCW30R

SKU: BCW30R
BCW30R Transistor Silicon PNP CASE: TO236 MAKE: Philips
Datasheet
BCW30R Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Philips
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 350m
hfe 150
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 10u
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 215
SMD Transistor Code C5
SKU 740190
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