The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD159

BD159

SKU: BD159
BD159 Transistor Silicon NPN CASE: TO126 MAKE: ON Semiconductor
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 156 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
BD159 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer ON Semiconductor
Vbr CBO 300
Vbr CEO 300
Ckts Per Dev. 1
Max. PD (W) 150
t(f) Max. (S) 500n
Max. hFE 240
Min hFE 30
Ic Max. (A) 500m
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 1.0u
Therm Res. (J-C) 300m
Derate Above 25°C 160m
VCE(sat) Max. 2.5
Oper. Temp (°C) Max. 125
@VCE (V) 10
Isolated Case (Y/N) Yes
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 375 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 79703
Back