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BD249A
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BD249A

SKU: BD249A
BD249A Transistor Silicon NPN CASE: TO218 MAKE: ST Microelectronics - STM
Datasheet
BD249A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer ST Microelectronics - STM
Vbr CEO 60
Max. PD (W) 3.0
Min hFE 20
Ic Max. (A) 25
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 700u
Polarity NPN
Tr Max. (s) 300n
R(sat) (Û) 120m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 40 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 115552
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