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BD649F
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BD649F

SKU: BD649F
BD649F Transistor - CASE: SOT186 MAKE: Philips
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case SOT186
Manufacturer Philips
Vbr CEO 100
Max. PD (W) 20
t(on) Delay (S) 2.0u
t(f) Max. (S) 10u+
Min hFE 750
Ic Max. (A) 8.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 15n
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 62 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 750
SKU 135958
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