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BDS12
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BDS12

SKU: BDS12
BDS12 Transistor Silicon NPN CASE: TO220 MAKE: Semelab
Datasheet
BDS12 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Semelab
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 90
Max. hFE 250
Min hFE 40
Ic Max. (A) 10
@Ic (test) (A) 0.5
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 136086
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