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BDT30AF
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BDT30AF

SKU: BDT30AF
BDT30AF Transistor Silicon PNP CASE: TO220F MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO220F
Manufacturer Generic
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 19
t(f) Max. (S) 1.0u-+
Max. hFE 75
Min hFE 15
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 200n
Polarity PNP
Tr Max. (s) 15n
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 150
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 14 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 737266
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