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BDT30B
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BDT30B

SKU: BDT30B
BDT30B Transistor Silicon PNP - CASE: TO220 MAKE: NXP Semiconductors
Price: £11.99
+ VAT 20% for UK purchases
£11.99
Qty
+ VAT 20% for UK purchases
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Product specifications
Equivalent BDT30
Type Transistor Silicon PNP
Case TO220
Manufacturer NXP Semiconductors
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 30
t(f) Max. (S) 1.0u-+
Max. hFE 75
Min hFE 15
Ic Max. (A) 1.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 15n
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 150
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 84742
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