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BDT60A
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BDT60A

SKU: BDT60A
BDT60A Transistor Silicon PNP CASE: TO220 MAKE: Generic
Datasheet
BDT60A Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Power Innovations
Vbr CEO 80
Max. PD (W) 50
t(on) Delay (S) 1.5u
t(f) Max. (S) 5.0u
Min hFE 750
Ic Max. (A) 4.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity PNP
Tr Max. (s) 15n
Derate Above 25°C 16m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN 750
SKU 116041
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