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BDV65
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BDV65

SKU: BDV65
BDV65 Transistor Silicon NPN CASE: TO218 MAKE: NTE Electronics
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
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Datasheet
BDV65 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer NTE Electronics
Vbr CEO 60
Max. PD (W) 125
t(on) Delay (S) 1.0u-
t(f) Max. (S) 3.0u-
Min hFE 1.0k
Ic Max. (A) 12
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 400u
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 400m
t(stor) Max. (S) 1.1u-
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 70k
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 300 pF
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 84763
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