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BDV67A
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BDV67A

SKU: BDV67A
BDV67A Transistor Silicon NPN CASE: TO3P MAKE: Generic
Datasheet
BDV67A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3P
Manufacturer MOSPEC Semiconductor
Vbr CEO 80
Max. PD (W) 200
t(on) Delay (S) 1.0u-
t(f) Max. (S) 3.5u-+
Min hFE 1.0k
Ic Max. (A) 16
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0m
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 715m
Trans. Freq (Hz) Min. 7.0M
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 16 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 372341
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