BDW52

SKU: BDW52

BDW52 Transistor Silicon PNP CASE: TO3 MAKE: SGS Thomson

Datasheet

BDW52 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	BDW52A
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	SGS Thomson
Vbr CBO	45
Vbr CEO	45
Max. PD (W)	125
Derate (Amb) (W/°C)	714m
Max. hFE	150
Min hFE	20
Ic Max. (A)	15
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	PNP
R(sat) (Û)	300m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	117 W
Maximum Collector-Base Voltage \|Vcb\|	45 V
Maximum Collector-Emitter Voltage \|Vce\|	45 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	84769

Back