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BDX18N
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BDX18N

SKU: BDX18N
BDX18N Transistor Silicon PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer Comset Semiconductors
Vbr CBO 70
Vbr CEO 60
Max. PD (W) 117
Derate (Amb) (W/°C) 667m
Max. hFE 70
Min hFE 20
Ic Max. (A) 15
@Ic (test) (A) 4.0
Polarity PNP
R(sat) (Û) 275m
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 117 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 136185
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