The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BDY63
View detailed images (1)

BDY63

SKU: BDY63
BDY63 Transistor Silicon NPN CASE: TO211MA MAKE: Texas Instruments
Product specifications
Type Transistor Silicon NPN
Case TO211MA
Manufacturer Texas Instruments
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 3.5
Max. hFE 150
Min hFE 30
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 372352
Back