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BDY89
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BDY89

SKU: BDY89
BDY89 Transistor Silicon NPN CASE: TO3 MAKE: Siemens Semiconductors
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Siemens Semiconductors
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 35
Min hFE 2.0k
Ic Max. (A) 8.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Derate Above 25°C 228m
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-39
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 200 °C
Forward Current Transfer Ratio (hFE), MIN 200
SKU 407383
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