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BF333
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BF333

SKU: BF333
BF333 Transistor Silicon NPN CASE: X09 MAKE: ATES
Datasheet
BF333 Datasheet
Product specifications
Equivalent BF333D
Type Transistor Silicon NPN
Case X09
Manufacturer ATES
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 220m
Derate (Amb) (W/°C) 2.2m
hfe 67
Ic Max. (A) 30m
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 1.7 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 36
SKU 736910
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