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BFG67
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BFG67

SKU: BFG67
BFG67 Transistor Silicon NPN CASE: TO251 MAKE: Philips
Datasheet
BFG67 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Philips
Vbr CBO 20
@Freq. (test) 2.0G
@Ic (A) 15m
@Ic (A) 15m
Mat. Silicon Logic
Noise Fig. 3.0
Oper. Gain Typ (S21) 10
Polarity NPN
PD Max. (W) 300m
S11 Deg. (Typ) 140
S11 Mag Typ. .45
S22 Deg. Typ. -98
S22 Mag Typ. .25
@VDS (VCE) (test) (V) 8.0
Coll. (or drain) Current Max. 50m
@Freq. (test) 2.0G
@VCE (test) 8.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 4-26
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.5 pF
Transition Frequency (ft): 7500 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code V3
SKU 136527
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