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BLW29
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BLW29

SKU: BLW29
BLW29 Transistor Silicon NPN CASE: TO218 MAKE: Philips
Datasheet
BLW29 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Philips
Vbr CEO 18
Max. PD (W) 53
Max. hFE 80
Min hFE 10
Ic Max. (A) 2.7
Icbo Max. @Vcb Max. (A) 5m
Polarity NPN
Trans. Freq (Hz) Min. 900M
Oper. Temp (°C) Max. 175
@VCE (V) 18
Pinout Equivalence Number 4-32
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 53 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 80 pF
Transition Frequency (ft): 450 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 137829
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