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BLX35
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BLX35

SKU: BLX35
BLX35 Transistor Silicon NPN CASE: TO114 MAKE: Transitron Electronic
Product specifications
Type Transistor Silicon NPN
Case TO114
Manufacturer Transitron Electronic
Vbr CEO 100
Max. PD (W) 350
Max. hFE 120
Min hFE 30
Ic Max. (A) 80
@Ic (test) (A) 30
Polarity NPN
R(sat) (Û) 43m
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 300 W
Maximum Collector-Base Voltage |Vcb| 145 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 80 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 586596
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