The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BLY11
View detailed images (13)

BLY11

SKU: BLY11
BLY11 Transistor Silicon NPN CASE: TO3 MAKE: ITT Industries
Product specifications
Equivalent BLY11S
Type Transistor Silicon NPN
Case TO3
Manufacturer ITT Industries
Vbr CBO 40
Vbr CEO 20
Max. PD (W) 3.0
Max. hFE 150
Min hFE 40-
Ic Max. (A) 500m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 120n-
R(sat) (Û) 12
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 150
@VCE (V) 2.5
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 47 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 21
SKU 372427
Back