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BLY11S
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BLY11S

SKU: BLY11S
BLY11S Transistor Silicon NPN CASE: TO3 MAKE: ITT Industries
Product specifications
Equivalent BLY11
Type Transistor Silicon NPN
Case TO3
Manufacturer ITT Industries
Vbr CBO 55
Vbr CEO 30
Max. PD (W) 4.0
Max. hFE 150
Min hFE 50
Ic Max. (A) 1.2
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 45n
R(sat) (Û) 12
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 240M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 55 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1.2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 47 pF
Transition Frequency (ft): 240 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 372428
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