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BSW29
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BSW29

SKU: BSW29
BSW29 Transistor Silicon NPN CASE: TO39 MAKE: Texas Instruments
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Texas Instruments
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 1.0
t(f) Max. (S) 85n+
Min hFE 35
Ic Max. (A) 1.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 700n
Polarity NPN
Tr Max. (s) 40n
R(sat) (Û) 350m
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 200M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 1 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 138538
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