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BSX35
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BSX35

SKU: BSX35
BSX35 Transistor Silicon PNP CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Generic
Vbr CBO 6.0
Vbr CEO 6.0
Max. PD (W) 300m
C(ob) (F) 1.8p
t(on) Delay (S) 30n
Derate (Amb) (W/°C) 1.7m
t(f) Max. (S) 60n+
hfe 70
Icbo Max. @Vcb Max. (A) 20n
Polarity PNP
Tr Max. (s) 60n
Trans. Freq (Hz) Min. 700M
@VCE (test) (V) .30
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 6 V
Maximum Collector-Emitter Voltage |Vce| 6 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 138597
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