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BU207A
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BU207A

SKU: BU207A
BU207A Transistor - Case: TO3 Make: Generic
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Betts
Vbr CEO 600
Max. PD (W) 12
t(f) Max. (S) .70u
Min hFE 2.2
Ic Max. (A) 7.5
@Ic (test) (A) 4.5
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 1.1
Derate Above 25°C 625m
Trans. Freq (Hz) Min. 7.0M
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 600 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 115 °C
Collector Capacitance (Cc) 125 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 2.5
SKU 139419
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