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BU808FI
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BU808FI

SKU: BU808FI
BU808FI Transistor Silicon NPN CASE: TO218F MAKE: SGS Thomson
Datasheet
BU808FI Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218F
Manufacturer SGS Thomson
Vbr CEO 700
Max. PD (W) 50.0
t(f) Max. (S) .8u-
Min hFE 25
Ic Max. (A) 5.0
@Ic (test) (A) 5.0
Mat. Silicon Logic
Polarity NPN
t(stor) Max. (S) 2.0u-
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1400 V
Maximum Collector-Emitter Voltage |Vce| 700 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 25
SKU 349897
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