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BUR12
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BUR12

SKU: BUR12
BUR12 Transistor Silicon NPN CASE: TO59 MAKE: SGS Thomson
Product specifications
Type Transistor Silicon NPN
Case TO59
Manufacturer SGS Thomson
Vbr CBO 200
Vbr CEO 120
Max. PD (W) 40
t(f) Max. (S) 150n
Max. hFE 140
Min hFE 80
Ic Max. (A) 10
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 200n
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 150 pF
Forward Current Transfer Ratio (hFE), MIN 80
SKU 573568
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